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Electrical Conductivity and Activation Energy of Heteroepitaxial Diamond
Proceedings of International Conference on Life Sciences, Engineering and Technology - 2022
Maddy Behravan
Dr. Catherina Zeman, Dr. Hakan Akcay
978-1-952092-32-9
43-49
Diamond is an attractive material for high power electronic devices because of its unique properties such as wide band-gap and high thermal conductivity. Heteroepitaxial growth of diamond offers the possibility of making devices over a large surface area. In order to address its suitability for electronic application and characterize electrical properties of heteroepitaxial diamond, a device is fabricated from a heteroepitaxial diamond film. Here the temperature-dependent DC electrical conductivity of heteroepitaxial diamond is reported. Owing to its extremely low electrical conductivity at room temperature, measurements of current-voltage characteristics were made between 300 ºC and 550 ºC. The technique used to measure electrical conductivity of heteroepitaxial diamond at high temperature required precise measurement circuits enabling thermal control with sufficient stability for electrical measurements of very small currents (<10-13 A). Ohmic contacts with diamond and procedures for preparing diamond surface are reported. In this study, an activation energy of 1.40 eV is found for the diamond device. This activation energy is close to that of natural diamond in medium range temperatures, between 400 to 550 ºC. The activation energy of the heteroepitaxial diamond appears to be reduced to ~1.3 eV at lower temperatures (<350 ºC), which matches the previously studied homoepitaxial diamond, suggesting the presence of electronic states comparable with homoepitaxial diamond.
Behravan, M. (2022). Electrical Conductivity and Activation Energy of Heteroepitaxial Diamond. In C.L. Zeman & H. Akcay (Eds.), Proceedings of ILSET 2022-- International Conference on Life Sciences, Engineering and Technology (pp. 43-49), Los Angeles, USA. ISTES Organization.
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